Professor Tao Wang


Professor (Chair) of Advanced Opto-Electronics

  • Address:
    Department of Electronic and Engineering Engineering
    Mappin Street, Sheffield, S1 3JD
    United Kingdom
  • Telephone: +44 (0) 114 222 5902
  • E-Mail:
  • Website: Personal Website

Dr Taeki Kim - Research Assosciate

B.Sc, M.Sc, Ph.D, Chonbuk University

Research Interests
Fabrication and characterisation of GaN related optical devices including
Nano & micro-structure GaN
Novel GaN devices
GaN LEDs and RCLEDs

Recent Publications

Dr Bing Liu - Research Associate

Ph.D, Nanjing University

Research Interests
Optical characterizations of III-nitride heterostructures
Non-polar and semi-polar InGaN/GaN multiple quantum wells(MQWs)
In-rich InGaN alloys for solar cell applications

Recent Publications

He has published 70 SCI-index papers, including over 20 publications in high impact journal, such as Applied Physics Letters, IEEE Electron Device Letters, Optics Express, Journal of Applied Physics, etc

Dr Yaonan Hou - Research Associate

Ph.D, Institute of Physics, Chinese Academy of Scicences

Research Interests
Optoelectronic devices based on III-nitride semiconductors, specifically LDs and LEDs
Characterization and device physics on III-nitride optoelectronic devices
Physical characterization of III-nitride semiconductors

Recent Publications
  • Y. Hou, coming soon

Dr Jie Bai - Research Associate

Ph.D, University of Tokushima

Research Interests
Device fabrication and characterization of GaN-based LEDs and Laser Diodes
High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials and devices
Structural study based on strain-relaxation and dislocation reduction for the GaN and AlGaN layers grown on an AlN buffer layer
Optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well (QW) structures

Publications

Dr Jie Bai has published more than 50 journal papers and 1 invited review paper. Her publications have received over 580 citations and has been ranked with a high-index of 15.

Recent Publications
  • J. Bai, Q. Wang and T. Wang, "Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes", accepted by Physica Status Solidi (2011)
  • J. Bai, Q. Wang, T. Wang, A. G. Cullis, and P. J. Parbrook, “Optical and microstructural study of a single layer of InGaN quantum dots”, J. Applied Physics 105, 053505 (2009)
  • J Bai, T Wang, K B Lee, P J Parbrook, Q Wang and A G Cullis, “Generation of misfit dislocations in highly-mismatched GaN/AlN layers”, Surface Science 602, 2643 (2008)
  • J. Bai, T. Wang, P. J. Parbrook, K. B. Lee, Q. Wang and A. G. Cullis, “Two coexisting mechanisms of dislocations reduction in an AlGaN layer grown using a thin GaN interlayer”, Applied Physics Letters, 91 131903 (2007)
  • J. Bai, T. Wang, P. J. Parbrook and A. G. Cullis,“Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer”, Applied Physics Letters 89, 131925 (2006)

Yipin Gong - Ph.D Student

B.Eng, Electronic and Electrical Engineering, University of Sheffield

Research Interests
Growth of c-plane III-nitride based materials and LED-structure by MOCVD
Growth of non-polar and semi-polar III-nitride based materials by MOCVD
Study of optical properties of AlGaN

Recent Publications
  • Y. P. Gong, K. Xing, and T. Wang, Appl. Phys. Lett, 99, 171912 (2011)
  • K. Xing, Y. P. Gong, J. Bai, and T. Wang, Appl. Phys. Lett, 99, 181907 (2011)
  • Q. Wang, J. Bai, Y. P. Gong and T. Wang, J. Phys. D: Appl. Phys., 44, 395102 (2011)
  • Y. P. Gong, K. Xing, and T. Wang, Phys. Status Solidi, 8, 2056 (2011)
  • Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang, Appl. Phys. Lett., 95, 161904 (2009)

Paul Renwick - Ph.D Student

MEng, Electronic and Electrical Engineering, University of Sheffield

Research interests
InGaN/GaN optical emitters, primarily in the green wavelength region
InGaN/GaN nanostructures
InGaN/GaN plasmonics

Recent Publications
  • P. Renwick, H. Tang, Q. Wang, R. Smith and T. Wang "Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of silver thickness due to surface plasmon coupling" Phys. Stat. Sol. C, Vol.8, Issue 7-8, Page 2176, July 2011
  • P. Renwick, H. Tang and T. Wang "Evaluating Internal Quantum Efficiency of Green LEDs via Electroluminescence" UK Nitrides Consortium (UKNC) Winter Conference, University of Manchester, UK (2011)
  • J. Bruckbauer, P. R. Edwards, P. Renwick, T. Wang and R. W. Martin "Optical Investigation of LED Structures Using Cathodoluminescence Hyperspectral Imaging" SET for BRITAIN event, House of Commons, Westminster Parliament, UK (2011)
  • P. Renwick, H. Tang, Q. Wang, R. Smith and T. Wang "Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of Ag thickness due to surface plasmon coupling" International Workshop on Nitride Semiconductors, Tampa, Florida, USA (2010)
  • P. Renwick, H. Tang, J. Bai, and T. Wang "Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures" Appl. Phys. Lett. 100, 182105 (2012)
  • P. Renwick, H. Tang, Y P Gong, K Xing, J Bai and T. Wang "Study of LO-phonon and exciton interaction in GaN/InGaN MQW nanorod structures" UK Nitrides Consortium (UKNC) Winter Conference, University of Bath, UK (2012)

Rick Smith - Ph.D Student

B.Sc. Physics, University of Sheffield

Research Interests
Novel LED technologies utilising III-Nitrides

Recent Publications
  • P. Renwick, H. Tang, Q. Wang, R. Smith and T. Wang "Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of silver thickness due to surface plasmon coupling" Phys. Stat. Sol. C, Vol.8, Issue 7-8, Page 2176, July 2011

Kun Xing - Ph.D Student

B.Eng, Electronic and Electrical Engineering, University of Sheffield

Research Interests
Growth of c-plane, non-polar and semi-polar III-nitride based materials by MOCVD
Overgrowth of a-plane GaN on non-polar nanorod templates by MOCVD
Optical properties of a-plane InGaN/GaN quantum well structures grown on the overgrown a-plane GaN, including the study of its relevant LED device structure and stimulated emission

Recent Publications
  • K. Xing, Y. P. Gong, J. Bai, and T. Wang, Appl. Phys. Lett, 99, 181907 (2011)
  • Y. P. Gong, K. Xing, and T. Wang, Appl. Phys. Lett, 99, 171912 (2011)
  • Y. P. Gong, K. Xing, and T. Wang, Phys. Status Solidi, 8, 2056 (2011)

Hao Tang - Ph.D Student

Bachelor of Engineering, Huazhong University of Science and Technology

Research Interests
Droop issue of III-V green/blue LEDs
Study of nanorods and surface plasmons
Photoluminescence measurement and FDTD simulation

Recent Publications
  • P. Renwick, H.Tang, Q.Wang, R.Smith and T.Wang “Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of silver thickness due to surface plasmon coupling”, International Workshop on Nitride Semiconductors(IWN), Tempe, USA (2010)
  • P.Renwick, H.Tang and T.Wang “Evaluating Internal Quantum Efficiency of Green LEDs via Electroluminescence”, UK Nitrides Consortium (UKNC), Manchester UK (2011)

Xiang Yu - Ph.D Student

B.Eng, Electronic and Electrical Engineering, University of Sheffield

Research Interests
Growth of semi-polar III-nitride materials by MOCVD

Recent Publications



Jonathan Benton - Ph.D Student

MChem w/Industrial Experience, Manchester University

Research Interests
Utilisation of novel III-Nitride semiconductors for the photocatalytic production of hydrogen

Recent Publications



Modestos Athanasiou - Ph.D Student

BEng. Electronic and Electrical Engineering, University of Sheffield

Research Interests
Fabrication of Photonic Crystals using Photoelectrochemical etching oxidation

Recent Publications



Chih-Chao Yang - Ph.D Student

MSc in Semiconductor Photonics and Electronics, EEE, University of Sheffield

Research Interests
Growth of III-nitride materials by MOCVD for photovoltaic devices

Recent Publications


Benbo Xu - Ph.D Student

Bachelor of Science, Guangdong University of Technology, China

MSc in Semiconductor Photonics and Electronics, University of Sheffield

Research Interests
Growth of III-nitride materials on Si substrate by MOCVD

Recent Publications