(1) Book Chapters

  • T Wang
    Chapter 5: “MOCVD growth of nitride DBRs for optoelectronics“
    Handbook of Optical Microcavities, Editor: Prof. Anthony H W Choi, page 157-210, (2014)
    Publisher: Pan Stanford Publishing, Singapore
  • T Wang
    Chapter 3: "Nitride emitters-recent progress", Wide Bandgap Light Emitting Materials and Devices, Editor: Profs Neumark, Kuskovsky and Jiang, page 109-144, (2007)
    Publisher: Wiley-VCH Verlag, Germany
  • T Wang
    Chapter 9: "Optical investigation of InGaN related quantum well structures" GaN-based Materials: Epitaxy and Characterization, Editor: Prof Zhe Chuan FENG, page 305-343, (2006)
    Publisher: Imperial College Press (ICP), UK
  • S Sakai, T Wang, H X Wang and J Bai
    The Chapter: "MOCVD growth of wide-bandgap nitride semiconductors", Gallium Nitride based Technology, Critical Reviews Series, Editor: Prof. M Osinski,
    Publisher: SPIE OPTICAL ENGINEERING PRESS, Washington, USA (2002). Proceeding of SPIE, Critical Review Vol.83, 47-76 (2002)

(2) Selected Publications in Scientific Reports, Nano Letters, APL and PRB, Nanotechnologies

    2015
    "Temporally and spatially resolved photoluminescence investigation of (11-22) semi-polar InGaN/GaN MQWs grown on nanorod templates"
    B Liu, R Smith, M Athanasiou, X Yu, J Bai and T Wang*,
    Appl. Phys. Lett. 106, xxxx(2015)
    “Influence of the piezoelectric fields on InGaN based intermediate band solar cells"
    H Tang, B Liu, and T Wang*,
    J. Phys. D: Appl. Phys. 48, 025101 (2015)
    2014
    "Nanoporous GaN for Solar Hydrogen Production"
    J Benton, J Bai, and T Wang*,
    Appl. Phys. Lett. 105, 171111 (2014)
    "Room temperature continuous-wave green lasing from an InGaN microdisk on silicon"
    M Athanasiou, R Smith, B Liu and T Wang*,
    Sci. Rep. 4, 7250; DOI:10.1038/srep07250 (2014)
    "Exciton localization dependent high efficiency non-radiative energy transfer in hybrid white light emitting InGaN / F8BT nanorod structures"
    R Smith, B Liu, J Bai and T Wang*,
    Appl. Phys. Lett. 105, 171111 (2014)
    “Optical-pumped whispering-gallery mode lasing from 2-micron GaN micro-disks pivoted on Si”
    Y Zhang, Z Ma, X Zhang, T Wang and H W Choi,
    Appl. Phys. Lett. 104, 221106 (2014)
    “Room temperature plasmonic lasing from a single nanorod with low threshold”
    Y Hou, P Renwick, B Liu, J Bai and T Wang*,
    Sci. Rep. 4, 5014; DOI:10.1038/srep05014 (2014).
    "Coherent nanocavity effect in InGaN/GaN nanodisk arrays"
    T Kim, B Liu, R Smith, M Athanasiou Y P Gong and T Wang*,
    Appl. Phys. Lett. 104, 161108 (2014)
    “Enhanced efficiency of InGaN/GaN solar cells with nanostructures”
    J Bai, M Athanasiou, T Kim and T Wang*,
    Appl. Phys. Lett. 104, 051129 (2014)
    2013
    “Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation”
    J Benton, J Bai and T Wang
    Appl. Phys. Lett. 103, 133904 (2013)
    “Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures”
    B Liu, R Smith, J Bai, Y P Gong and T Wang
    Appl. Phys. Lett. 103, 101108 (2013)
    “Hybrid III-nitride/organic semiconductor nanostructure with high efficiency non-radiative energy transfer for white light emitter”
    R Smith, B Liu, J Bai and T Wang
    Nano Lett. 13, 3042 (2013)
    “Simplifying an approach to the fabrication of two-dimensional InGaN/GaN photonic crystal structure”
    M Athanasiou, T K Kim, B Liu, R Smith and T Wang
    Appl. Phys. Lett. 102, 191108 (2013)
    "Optical study of GaN nanorods containing multiple InGaN/GaN nanodisks"
    J Bruckbauer, P R Edwards, J Bai, T Wang and R W Martin
    Nanotechnology 24, 365704 (2013)
    “Enhancement in Hydrogen Generation Efficiency Using A GaN-based Nanorod Structure”
    J Benton, J Bai and T Wang
    Appl. Phys. Lett. 120, 173905 (2013)
    “Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on a nanorod template”
    J Bai, Y P Gong , K Xing, X Yu, and T Wang
    Appl. Phys. Lett. 102, 101906 (2013)
    2012
    “longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures”
    P Renwick, H Tang, J Bai, and T Wang
    Appl. Phys. Lett. 100, 182105 (2012)
    2011
    “InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organised nano-masks”
    K Xing, Y Gong, J Bai and T Wang
    Appl. Phys. Lett. 99, 181907 (2011)
    “Optical gain in AlGaN/AlGaN multiple quantum well grown on high temperature AlN multiple buffers”
    Y P Gong, K Xing and T Wang
    Appl. Phys. Lett. 99, 171912 (2011)
    “High resolution cathodoluminescence hyperspectral imaging of InGaN/GaN multiple quantum wells”
    J Bruckbauer, P R. Edwards, T Wang and R W. Martin
    Appl. Phys. Lett. 98, 141908 (2011)
    2010
    “Optically-pumped ultraviolet lasing from nitride nanopillars at room temperature”
    R Chen, H D Sun, T Wang, K N Hui and H W Choi
    Appl. Phys. Lett. 96, 241101 (2010)
    “Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures”
    S C Davies, D J Mowbray, F Ranalli and T Wang
    Appl. Phys. Lett. 96, 251904 (2010)
    2009
    “340 nm Stimulated emission of AlGaN based MQW grown using high temperature AlN buffer technologies on sapphire”
    Q Wang, Y P Gong, J F Zhang, J Bai, F Ranalli and T Wang
    Appl. Phys. Lett. 95, 161904 (2009)
    “Influence of the crystalline quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots”
    S C Davies, D J Mowbray, Q Wang, F Ranalli and T Wang
    Appl. Phys. Lett. 95, 101909 (2009)
    “Optical and microstructural studies of InGaN/GaN quantum dot ensembles”
    S C Davies, D J Mowbray, F Ranalli, P J Parbrook, Q Wang, T Wang, B S Yea, B J Sherliker, M P Halsall, R J Kashtiban and U Bangert
    Appl. Phys. Lett. 95, 111903(2009)
    2008
    “Influence of Annealing Temperature on Optical Properties of InGaN Quantum Dot Based Light Emitting Diodes”
    Q Wang, T Wang, J Bai, A G Cullis, P J Parbrook and F Ranalli
    Appl. Phys. Lett. 93, 081915 (2008)
    2007
    “Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer”
    J Bai, T Wang, P J Parbrook, Q Wang, K B Lee, and A G Cullis
    Appl. Phys. Lett. 91, 131903 (2007)
    “Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy”
    P D C King, T D Veal, P H Jefferson, C F McConville, T Wang, P J Parbrook, H Lu and W J Schaff
    Appl. Phys. Lett. 90, 132105 (2007)
    2006
    “Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in magnesium-doped GaN”
    G N Aliev, S Zeng, S J Bingham, D Wolverson and J J Davies, T Wang and P J Parbrook
    Phys. Rev. B 74, 235205 (2006)
    “The dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness”
    J H Na, R A Taylor, K H Lee, A M Fox, T Wang, P Parbrook, S N. Yi, J W Choi and J S Lee
    Appl. Phys. Lett. 89, 253120 (2006)
    “Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer”
    T Wang, K B Lee, J Bai, P J Parbrook, R J Airey, Q Wang, G Hill, F Ranalli and A G Cullis
    Appl. Phys. Lett. 89, 081126 (2006)
    “Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using an island-like AlN buffer”
    J Bai, T Wang, P J Parbrook and A G Cullis
    Appl. Phys. Lett. 89, 131925 (2006)
    “The origin of the red luminescence in Mg-doped GaN”
    S Zeng, G Aliev, D Wolverson, J Davies, S Bingham, D Abdulmalik, P Coleman, T Wang and P Parbrook
    Appl. Phys. Lett. 89, 022107 (2006)
    “Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing”
    D O Kundys, J-P R Wells, A D Andreev, S A Hashemizadeh, T Wang, P J Parbrook, A M Fox, D J Mowbray and M S Skolnick
    Phys. Rev. B 73, 165309 (2006)
    “Effects of depletion on the emission from individual InGaN dots”
    B Sherlikera and M P Halsall, P D Buckle, P J Parbrook and T Wang
    Appl. Phys. Lett. 88, 122115 (2006)
    2005
    “Picosecond Carrier Dynamics in AlInGaN Multiple Quantum Wells”
    A Hashemizadeh, J-P R Wells, P Murzyn, J Brown, B D Jones, T Wang, P J Parbrook, A M Fox, D J Mowbray and M S Skolnick
    Appl. Phys. Lett. 87, 232106 (2005)
    “Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer”
    T Wang, J Bai, P J Parbrook and A G Cullis
    Appl. Phys. Lett. 87, 151906 (2005)
    “Fabrication and optical investigation of a high density GaN nanowire array”
    T Wang, F Ranalli, P J Parbrook, R Airey, J Bai R Rattlidge and G Hill
    Appl. Phys. Lett. 86, 103103 (2005)
    “Nature of acceptor states in magnesium-doped gallium nitride”
    G N Aliev, S Zeng, J J Davies, D Wolverson, S J Bingham, P J Parbrook and T Wang
    Phys. Rev. B 71, 195204(2005)
    2004
    “High-reflectivity AlxGaN1-xN/AlyGa1-yN distributed Bragg reflectors with a peak wavelength around 350 nm”
    T Wang, R J Lynch and P J Parbrook, R Butte, A Alyamani, D Sanvitto and M S Skolnick
    Appl. Phys. Lett. 85, 43 (2004)
    “Optical Investigation of InGaN/GaN multiple-quantum wells under high excitation”
    T Wang, P J Parbrook, W H Fan and A M Fox
    Appl. Phys. Lett. 84, 5159 (2004)
    “Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells”
    W H Fan, S M Olaizola, J P R. Wells, A M Fox, T Wang, P J Parbrook, D J Mowbray and M S Skolnick
    Appl. Phys. Lett. 84, 3052 (2004)
    2003
    “Electron-beam-induced segregation in InGaN’GaN multiple-quantum wells”
    J P O’Neill, I M Ross, A G Cullis, T Wang and P J Parbrook
    Appl. Phys. Lett. 83, 1965 (2003)
    Before 2003
    “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348nm grown on sapphire substrate”
    T Wang, Y H Liu, Y B Lee, J P Ao, J Bai and S Sakai
    Appl. Phys. Lett. 81 2508 (2002)
    “Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlGaN/GaN heterostructures”
    T Wang, J Bai and S Sakai
    Phys. Rev. B 63, 205320 (2001)
    “Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes”
    T Wang, J Bai, S Sakai and J K Ho
    Appl. Phys. Lett. 78, 2671 (2001)
    “Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures”
    K J Lee and J J Harris, J Kent, T Wang, S Sakai, D K Maude and J-C Portal
    Appl. Phys. Lett. 78, 2893 (2001)
    “Magneto-transport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time”
    T Wang, J Bai, S Sakai Y Ohno and H Ohno
    Appl. Phys. Lett. 76, 2737 (2000)
    “The influence of buffer layer and growth temperature on the quality of undoped GaN layer grown on sapphire substrate by MOCVD”
    T Wang, D Nakagawa, H B Sun, H X Wang, J Bai, S Sakai and H Misawa
    Appl. Phys. Lett. 76, 2220 (2000)
    “Effect of silicon-doping on the optical and transport properties of InGaN/GaN multiple quantum well structures”
    T Wang, H Saeki, J Bai, M Lachab, T Shirahama, and S Sakai
    Appl. Phys. Lett 76, 1737 (2000)
    “Magneto-optical Study of Excitonic states in In0.045Ga0.955As/GaAs coupled quantum wells”
    T Wang, M Bayer, A Forchel, N A Gippius and V D Kulakovskii
    Phys. Rev. B 62, 7433 (2000)
    “The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diodes”
    T Wang, T Sugahara, S Sakai and J Orton
    Appl. Phys. Lett. 74, 1376 (1999)
    “Electron mobility exceeding 10^4cm^2/V.s in an AlGaN-GaN heterostructure grown on a sapphire substrate”
    T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai and H Ohno
    Appl. Phys. Lett. 74, 3531 (1999)
    “Optical investigation of InGaN/GaN multiple quantum wells”
    T Wang, D Nakagawa, M Lachab, T Sugahara and S Sakai
    Appl. Phys. Lett. 74, 3128 (1999)
    “MOCVD selective growth and characterization of InGaN quantum dots”
    J Wang, M Nozaki, M Lachab, Y Ishikawa, R S Q Fareed, T Wang, M Hao and S Sakai
    Appl. Phys. Lett, 75, 950 (1999)
    “The effect of the hole sub-band mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells”
    T Wang, M Bayer and A Forchel
    Phys. Rev. B 58, R10183 (1998) (Rapid Communication)
    “Transition from direct to indirect band structure induced by the AlSb layer in GaSb/AlSb quantum well”
    T Wang, F Kieseling and A Forchel
    Phys. Rev. B 58, 3594 (1998)
    “Growth and Optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor”
    T Wang and A Forchel
    Appl. Phys. Lett. 73, 1847 (1998)
    “Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells”
    T Wang, D Nakagawa, J Wang, T Sugahara and S Sakai
    Appl. Phys. Lett. 73, 3571 (1998)